AEM study of CVD low-carbon boron carbide phases

CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions

................................................................................................................................................ iii Populärvetenskaplig Sammanfattning ................................................................................................ v Preface .............................................................................................................

Plasma CVD of hydrogenated boron-carbon thin films from triethylboron.

Low-temperature chemical vapor deposition (CVD) of B-C thin films is of importance for neutron voltaics and semiconductor technology. The highly reactive trialkylboranes, with alkyl groups of 1-4 carbon atoms, are a class of precursors that have been less explored for low-temperature CVD of B-C films. Herein, we demonstrate plasma CVD of B-C thin films using triethylboron (TEB) as a single sour...

Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors

Thin, amorphous boron-carbon films were deposited at low temperature (400-600 °C) by thermally activated CVD using the organoborane triethylboron (TEB) as a single precursor. Two different carrier gases were tested. At 600 °C using argon as carrier gas the deposition rate was close to 1 μm/h. The film had a density of 2.14 g/cm with a B/C-ratio of 3.7. When hydrogen was used as carrier gas the ...

Boron carbide/n-silicon carbide heterojunction diodes

Equilibrium analysis of zirconium carbide CVD growth

A chemical equilibrium study was performed to investigate the effect of growth parameters on the constitution in ZrC films grown by chemical vapor deposition (CVD). The equilibrium analysis of the Zr–C–H system demonstrated that ZrC (fcc) deposition is favorable and that a certain minimum amount of hydrogen should prevent co-deposition of elemental carbon over a wide range of temperature, press...